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hamamatsu InGaAs PIN photodiode G8370-81 Low PDL (Polarization Dependence Loss)
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hamamatsu InGaAs PIN photodiode G8370-81 Low PDL (Polarization Dependence Loss)

$299.00

hamamatsu InGaAs PIN photodiode G8370-81 Low PDL (Polarization Dependence Loss) Download Datasheet: hamamatsu InGaAs PIN photodiode G8370-81 Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-81 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.   Features – Low PDL (Polarization Dependence Loss) – Low noise, low dark…

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Description

hamamatsu InGaAs PIN photodiode G8370-81 Low PDL (Polarization Dependence Loss)

Download Datasheet:

hamamatsu InGaAs PIN photodiode G8370-81 Low PDL (Polarization Dependence Loss)

InGaAs PIN photodiode G8370-81 has low PDL (Polarization Dependence Loss) at 1.55 μm, large shunt resistance and very low noise.

 

Features
– Low PDL (Polarization Dependence Loss)
– Low noise, low dark current
– Large active area
– active area sizes: φ1 mm

Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Metal
Package Category TO-18
Cooling Non-cooled
Spectral response range 0.9 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 5 nA
Cutoff frequency (typ.) 35 MHz
Terminal capacitance (typ.) 90 pF
Noise equivalent power (typ.) 2×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=λp, Dark current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 Ω, -3 dB, Terminal capacitance: VR=1 V, f=1 MHz, unless otherwise noted

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