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hamamatsu Si APD S2384 Low bias operation, for 800 nm band
hamamatsu Si APD S2384 Low bias operation, for 800 nm band - Image 2
hamamatsu Si APD S2384 Low bias operation, for 800 nm band - Image 3

hamamatsu Si APD S2384 Low bias operation, for 800 nm band

$299.00

hamamatsu Si APD S2384 Low bias operation, for 800 nm band Download Datasheet: hamamatsu Si APD S2384 Low bias operation, for 800 nm band Features – Stable operation at low bias – High-speed response – High sensitivity and low noise Specifications Type Near infrared type (Low bias operation) Photosensitive area φ3 mm Package Metal Package…

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Description

hamamatsu Si APD S2384 Low bias operation, for 800 nm band

Download Datasheet:

hamamatsu Si APD S2384 Low bias operation, for 800 nm band

Features
– Stable operation at low bias
– High-speed response
– High sensitivity and low noise

Specifications

Type Near infrared type
(Low bias operation)
Photosensitive area φ3 mm
Package Metal
Package Category TO-5
Peak sensitivity wavelength (typ.) 800 nm
Spectral response range 400 to 1000 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 10 nA
Cutoff frequency (typ.) 120 MHz
Terminal capacitance (typ.) 40 pF
Breakdown voltage (typ.) 150 V
Temperature coefficient of breakdown voltage (typ.) 0.65 V/℃
Gain (typ.) 60
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1

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