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hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type
hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type - Image 2
hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type - Image 3

hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type

$299.00

hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type Download Datasheet: hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features – Stable operation at low bias – High-speed response – High sensitivity…

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Description

hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type

Download Datasheet:

hamamatsu Si APD S4315-01 Low bias operation, for 800 nm band, TE-cooled type

This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection.

Features
– Stable operation at low bias
– High-speed response
– High sensitivity and low noise

Specifications

Type Near infrared type
(TE-cooled type)
Photosensitive area φ0.5 mm
Package Metal
Package Category TO-8
Peak sensitivity wavelength (typ.) 800 nm
Spectral response range 400 to 1000 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 1 nA
Cutoff frequency (typ.) 900 MHz
Terminal capacitance (typ.) 2 pF
Breakdown voltage (typ.) 150 V
Temperature coefficient of breakdown voltage (typ.) 0.65 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1

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