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hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity
hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity - Image 2
hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity - Image 3

hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity

$299.00

hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity Download Datasheet: hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity Features – High UV sensitivity: QE＝75 % (λ=200 nm) – Suppressed near IR sensitivity – Low dark current – High reliability Specifications Photosensitive area 1.1…

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Description

hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity

Download Datasheet:

hamamatsu Si photodiode S1226-18BQ For UV to visible, precision photometry; suppressed near IR sensitivity

Features
– High UV sensitivity: QE＝75 % (λ=200 nm)
– Suppressed near IR sensitivity
– Low dark current
– High reliability

Specifications

Photosensitive area 1.1 × 1.1 mm
Package Metal
Package category TO-18
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.36 A/W
Dark current (max.) 2 pA
Rise time (typ.) 0.15 μs
Terminal capacitance (typ.) 35 pF
Noise equivalent power (typ.) 1.6×10-15 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted

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