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hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry
hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry - Image 2
hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry - Image 3

hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry

$299.00

hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry Download Datasheet: hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry Features – High sensitivity in visible to near infrared range – Low dark current – High reliability – Superior linearity Specifications Photosensitive area 3.9 × 4.6 mm Package Metal Package category…

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Description

hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry

Download Datasheet:

hamamatsu Si photodiode S2386-45K For visible to near IR, general-purpose photometry

Features
– High sensitivity in visible to near infrared range
– Low dark current
– High reliability
– Superior linearity

Specifications

Photosensitive area 3.9 × 4.6 mm
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 320 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.6 A/W
Dark current (max.) 30 pA
Rise time (typ.) 5.5 μs
Terminal capacitance (typ.) 2300 pF
Noise equivalent power (typ.) 1.4×10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

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