US Laser Company

Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode
Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode - Image 2
Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode - Image 3

Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode

$299.00

Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode Download Datasheet: Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode Features – Sensitivity matching with BGO and CsI(TI) scintillators – Bare chip type (unsealed) – High quantum efficiency – Low capacitance – High-speed response – High stability – Good energy resolution Specifications Photosensitive…

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Description

Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode

Download Datasheet:

Si PIN photodiode S3590-09 Large photosensitive area Si PIN photodiode

Features
– Sensitivity matching with BGO and CsI(TI) scintillators
– Bare chip type (unsealed)
– High quantum efficiency
– Low capacitance
– High-speed response
– High stability
– Good energy resolution

Specifications

Photosensitive area 10 × 10 mm
Package Ceramic
Package category Unsealed
Cooling Non-cooled
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 6000 pA
Cutoff frequency (typ.) 40 MHz
Terminal capacitance (typ.) 40 pF
Noise equivalent power (typ.) 3.8×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V, unless otherwise noted

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