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hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry
hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry - Image 2
hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry - Image 3

hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry

$299.00

hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry Download Datasheet: hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry Features – High sensitivity in visible to near infrared range – High reliability – High-speed response: fc=20 MHz – Low capacitance Specifications Photosensitive area 3.6 × 3.6 mm Package…

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Description

hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry

Download Datasheet:

hamamatsu Si PIN photodiode S1223-01 For visible to near IR, precision photometry

Features
– High sensitivity in visible to near infrared range
– High reliability
– High-speed response: fc=20 MHz
– Low capacitance

Specifications

Photosensitive area 3.6 × 3.6 mm
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 320 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.52 A/W
Dark current (max.) 10000 pA
Cutoff frequency (typ.) 20 MHz
Terminal capacitance (typ.) 20 pF
Noise equivalent power (typ.) 1.3×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, Terminal capacitance: VR=20 V, f=1 MHz, Noise equivalent power: VR=20 V, λ=λp, unless otherwise noted

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