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hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry
hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry - Image 2
hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry - Image 3

hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry

$299.00

hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry Download Datasheet: hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry Features – High UV sensitivity: QE 75% (λ=200 nm) – Low capacitance Specifications Photosensitive area 10 × 10 mm Package Ceramic Package category — Cooling Non-cooled Reverse voltage (max.) 5 V Spectral response…

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Description

hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry

Download Datasheet:

hamamatsu Si photodiode S1337-1010BQ For UV to IR, precision photometry

Features
– High UV sensitivity: QE 75% (λ=200 nm)
– Low capacitance

Specifications

Photosensitive area 10 × 10 mm
Package Ceramic
Package category —
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 200 pA
Rise time (typ.) 3 μs
Terminal capacitance (typ.) 1100 pF
Noise equivalent power (typ.) 1.8×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted

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