US Laser Company

hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes
hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes - Image 2
hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes - Image 3

hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes

$299.00

hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes Download Datasheet: hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes Features – Sensitivity matching with BGO and CsI(TI) scintillators – Low capacitance – High-speed response – High stability – Good energy resolution Specifications Photosensitive area 18 × 18 mm Package Ceramic…

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Description

hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes

Download Datasheet:

hamamatsu Si PIN photodiode S3204-09 Large photosensitive area Si PIN photodiodes

Features
– Sensitivity matching with BGO and CsI(TI) scintillators
– Low capacitance
– High-speed response
– High stability
– Good energy resolution

Specifications

Photosensitive area 18 × 18 mm
Package Ceramic
Package category Unsealed
Cooling Non-cooled
Reverse voltage (max.) 100 V
Spectral response range 340 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.66 A/W
Dark current (max.) 20000 pA
Cutoff frequency (typ.) 20 MHz
Terminal capacitance (typ.) 130 pF
Noise equivalent power (typ.) 6.6×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz, Noise equivalent power: VR=70 V

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