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hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package)
hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package) - Image 2
hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package) - Image 3

hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package)

$299.00

hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package) Download Datasheet: hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package) The S6967-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si PIN photodiode features high sensitivity, high-speed response and…

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Description

hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package)

Download Datasheet:

hamamatsu Si PIN photodiode S6967-01 Plastic SIP (single in-line package)

The S6967-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si PIN photodiode features high sensitivity, high-speed response and large photosensitive area.

Features
– Visible-cut
– High sensitivity
– High-speed response
– Large active area
– Plastic package: 7 × 7.8 mm
– Photosensitive area size: 5.5 × 4.8 mm

Specifications

Photosensitive area 5.5 × 4.8 mm
Package Plastic
Package category —
Cooling Non-cooled
Reverse voltage (max.) 20 V
Spectral response range 320 to 1060 nm
Peak sensitivity wavelength (typ.) 900 nm
Photosensitivity (typ.) 0.63 A/W
Dark current (max.) 5000 pA
Cutoff frequency (typ.) 50 MHz
Terminal capacitance (typ.) 50 pF
Noise equivalent power (typ.) 2.0×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=900 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=10 V, unless otherwise noted

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