Description
hamamatsu Si photodiode S11141-10 High sensitivity, direct detection of low energy (1 keV or more) electron beams
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Features
– Direct detection of low energy (1 keV or more) electron beams with high sensitivity
– High gain: 300 times
high detection efficiency: 72 % (incident electronenergy: 1.5 keV)
– Large photosensitive area size: 10 × 10 mm
– φ2.0 mm hole in center of photosensitive area
– Thin ceramic package
– Uses a wiring board made of less magnetic materials
