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hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region
hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region - Image 2
hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region - Image 3

hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region

$299.00

hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region Download Datasheet: hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region The S13337-01 is a surface mount type Si PIN photodiode in a ceramic package with glass. This achieves high-speed response in the UV to near…

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Description

hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region

Download Datasheet:

hamamatsu Si PIN photodiode S13337-01 Si PIN photodiode for UV to near infrared region

The S13337-01 is a surface mount type Si PIN photodiode in a ceramic package with glass. This achieves high-speed response in the UV to near infrared region.

Features
– High-speed response
– Surface mount type, compact, chip carrier package
– Compatible with lead-free reflow soldering

Specifications

Photosensitive area φ0.8 mm
Package Ceramic
Package category Surface mount type
Cooling Non-cooled
Reverse voltage (max.) 20 V
Spectral response range 320 to 1000 nm
Peak sensitivity wavelength (typ.) 800 nm
Photosensitivity (typ.) 0.57 A/W
Dark current (max.) 500 pA
Cutoff frequency (typ.) 500 MHz
Terminal capacitance (typ.) 3 pF
Noise equivalent power (typ.) 3.1×10-15 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=λp, Dark current: VR=10 V, Cutoff frequency: VR=10 V, RL=50 Ω, λ=830 nm, -3 dB, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=10 V, λ=λp, unless otherwise noted

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