Description
hamamatsu Si PIN photodiode S14536-320 Si detectors for high-energy particles
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hamamatsu Si PIN photodiode S14536-320 Si detectors for high-energy particles
The S14536 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays. These detectors are mounted on a PC board with an opening for the purpose of ΔE/E detection of charged particles and X-rays.
Features
– Large area
– Low dark current
– High voltage tolerance
Specifications
| Photosensitive area | 48 × 48 mm |
|---|---|
| Chip thickness | 320 ± 15 μm |
| Dead layer thickness (Front side) | 1.5 μm |
| Dead layer thickness (Rear side) | 20 μm |
| Full depletion voltage max. | 100 V |
| Dark current max. | 100 nA |
| Cuttoff frequency | 3 MHz |
| Terminal capacitance | 860 pF |
