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hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry
hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry - Image 2
hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry - Image 3

hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry

$299.00

hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry Download Datasheet: hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry The S17348 is a Si PIN photodiode developed for YAG lasers (1060 nm). High photosensitivity of 0.37 A/W at 1060 nm and high-speed response of 120 MHz…

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Description

hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry

Download Datasheet:

hamamatsu Si PIN photodiode S17348 Si PIN photodiode for visible to infrared photometry

The S17348 is a Si PIN photodiode developed for YAG lasers (1060 nm). High photosensitivity of 0.37 A/W at 1060 nm and high-speed response of 120 MHz are realized.

Features
– High sensitivity in infrared region: 0.37 A/W (λ=1060 nm)
– High-speed response: fc=120 MHz (VR=100 V)
– Low capacitance: Ct=6.5 pF (VR=100 V)
– Large photosensitive area: φ3 mm
– High reliability: TO-5 metal package

Specifications

Photosensitive area φ3.0 mm
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 150 V
Spectral response range 360 to 1120 nm
Peak sensitivity wavelength (typ.) 940 nm
Photosensitivity (typ.) 0.37 A/W
Dark current (max.) 10000 pA
Cutoff frequency (typ.) 120 MHz
Terminal capacitance (typ.) 6.5 pF
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=1060 nm, Dark current: VR=100 V, Cutoff frequency: VR=100 V, RL=50 Ω, λ=1060 nm, Terminal capacitance: VR=100 V, f=10 kHz, unless otherwise noted

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