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hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area: Φ1.0 mm
hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area: Φ1.0 mm - Image 2
hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area: Φ1.0 mm - Image 3

hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area: Φ1.0 mm

$299.00

hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area: Φ1.0 mm Download Datasheet: hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area Φ1.0 mm Features – Small SMD (surface mount device) package – Low noise, low dark current – Low price Specifications Photosensitive area φ1.0 mm Number of elements…

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Description

hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area: Φ1.0 mm

Download Datasheet:

hamamatsu InGaAs PIN photodiode G11193-10R Small package, surface mount type, Active area Φ1.0 mm

Features
– Small SMD (surface mount device) package
– Low noise, low dark current
– Low price

Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Ceramic
Package Category Surface mount type
Cooling Non-cooled
Spectral response range 0.9 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1 A/W
Dark current (max.) 4 nA
Cutoff frequency (typ.) 60 MHz
Terminal capacitance (typ.) 55 pF
Noise equivalent power (typ.) 1.4×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=5 V, Cutoff frequency: VR=5 V, RL=50 Ω, -3 dB, Terminal capacitance: VR=5 V, f=1 MHz

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