Description
660nm 780nm Dual-wavelength Laser Diodes
High quality Dual-wavelength 660nm/780nm red and infrared laser diodes , there are two wavelengths in one diode.
LNCT28PF01WW is a MOCVD fabricated 660nm and 780nm band dual wavelength laser diode with multi quantum well structure,adapting open type frame package to reduce the size and weight.
Feature:
- Dual wavelength: 661 nm (typ) and 783 nm (typ)
- High output power: 300 mW (pulse) for Red and 380 mW (pulse) for IR
- Package : Flat package
- Operating temperature : Max. +85°C
Application:
- Optical disk drive
- Sensing
- Industrial use
Country of Origin: Japan
Output wavelength: 660nm / 780nm
Maximum power output: 660nm / 320mW , 780nm / 350mW
Operating current: <300mA
Operating voltage: 2.5-3V
Package: flat
Working life: more than 10,000 hours
Electrical and Optical Characteristics T=25°C, CW, Po=90 mW for RED-LD, 175 mW for IR-LD
RED :
Threshold current : 80 mA
Operating current : 180 mA
Operating voltage : 3.0 V
Wavelength : 656 ~ 665 nm
Beam Divergence : Parallel : 7.5 ~ 13.0 deg
Perpendicular ：13.0 ~ 19.5 deg
IR :
Threshold current : 70 mA
Operating current : 275 mA
Operating voltage : 3.0 V
Wavelength : 777 ~ 791 nm
Beam Divergence : Parallel : 6.0 ~ 11.5 deg
Perpendicular ：12.0 ~ 19.0 deg
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