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hamamatsu InGaAs PIN photodiode G10899-003K Wide spectral response range (0.5 to 1.7 μm), Active area: 3 mm dia

hamamatsu InGaAs PIN photodiode G10899-003K Wide spectral response range (0.5 to 1.7 μm), Active area: 3 mm dia

$299.00

hamamatsu InGaAs PIN photodiode G10899-003K Wide spectral response range (0.5 to 1.7 μm), Active area: 3 mm dia Download Datasheet: hamamatsu InGaAs PIN photodiode G10899-003K Wide spectral response range (0.5 to 1.7 μm), Active area 3 mm dia The G10899-03K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm…

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Description

hamamatsu InGaAs PIN photodiode G10899-003K Wide spectral response range (0.5 to 1.7 μm), Active area: 3 mm dia

Download Datasheet:

hamamatsu InGaAs PIN photodiode G10899-003K Wide spectral response range (0.5 to 1.7 μm), Active area 3 mm dia

The G10899-03K is an InGaAs PIN photodiode that covers a wide spectral response range from 0.5 μm to 1.7 μm. While standard InGaAs PIN photodiodes have spectral response ranging from 0.9 μm to 1.7 μm, the G10899-03K has sensitivity extending to 0.5 μm on the shorter wavelength side. A wide range of spectrum can be detected with a single detector. The G10899-03K also features low noise and low dark current.

Features
– Wide spectral response range
– Low noise, low dark current
– Large active area available

Specifications

Photosensitive area φ3.0 mm
Number of elements 1
Package Metal
Package Category TO-5
Cooling Non-cooled
Spectral response range 0.5 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1 A/W
Dark current (max.) 75 nA
Cutoff frequency (typ.) 5 MHz
Terminal capacitance (typ.) 600 pF
Noise equivalent power (typ.) 5×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 Ω, Terminal capacitance: VR=1 V, f=1 MHz

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