US Laser Company

hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area: φ1 mm
hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area: φ1 mm - Image 2
hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area: φ1 mm - Image 3

hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area: φ1 mm

$299.00

hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area: φ1 mm Download Datasheet: hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area φ1 mm Features – Low noise, low dark current – Low terminal capacitance – Photosensitive area: φ1 mm – Low noise Specifications Photosensitive area φ1.0 mm Number of elements 1 Package Metal Package Category TO-18 Cooling Non-cooled…

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Description

hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area: φ1 mm

Download Datasheet:

hamamatsu InGaAs PIN photodiode G12180-010A Photosensitive area φ1 mm

Features
– Low noise, low dark current
– Low terminal capacitance
– Photosensitive area: φ1 mm
– Low noise

Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Metal
Package Category TO-18
Cooling Non-cooled
Spectral response range 0.9 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 4 nA
Cutoff frequency (typ.) 60 MHz
Terminal capacitance (typ.) 55 pF
Noise equivalent power (typ.) 1.4×10-14 W/Hz1/2
Measurement condition Typ. Tc=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=5 V, Cutoff frequency: VR=5 V, RL=50 Ω, -3 dB, Terminal capacitance: VR=5 V, f=1 MHz

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