US Laser Company

hamamatsu InGaAs PIN photodiode G12180-110A Photosensitive area: φ1 mm
hamamatsu InGaAs PIN photodiode G12180-110A Photosensitive area: φ1 mm - Image 2
hamamatsu InGaAs PIN photodiode G12180-110A Photosensitive area: φ1 mm - Image 3

hamamatsu InGaAs PIN photodiode G12180-110A Photosensitive area: φ1 mm

$299.00

hamamatsu InGaAs PIN photodiode G12180-110A Photosensitive area: φ1 mm Download Datasheet:   Features – Low noise, low dark current – Low terminal capacitance – Photosensitive area: φ1 mm Specifications Photosensitive area φ1.0 mm Number of elements 1 Package Metal Package Category TO-8 Cooling One-stage TE-cooled Spectral response range 0.9 to 1.67 μm Peak sensitivity wavelength…

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Description

hamamatsu InGaAs PIN photodiode G12180-110A Photosensitive area: φ1 mm

Download Datasheet:

 

Features
– Low noise, low dark current
– Low terminal capacitance
– Photosensitive area: φ1 mm

Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Metal
Package Category TO-8
Cooling One-stage TE-cooled
Spectral response range 0.9 to 1.67 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 0.1 nA
Cutoff frequency (typ.) 40 MHz
Terminal capacitance (typ.) 75 pF
Noise equivalent power (typ.) 2.0×10-15 W/Hz1/2
Measurement condition Typ. Tc=-10 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 Ω, Terminal capacitance: VR=1 V, f=1 MHz

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