US Laser Company

hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area: φ2 mm
hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area: φ2 mm - Image 2
hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area: φ2 mm - Image 3

hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area: φ2 mm

$299.00

hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area: φ2 mm Download Datasheet: hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area φ2 mm Features – Low noise, low dark current – Low terminal capacitance – Photosensitive area: φ2 mm Specifications Photosensitive area φ2.0 mm Number of elements 1 Package Metal Package Category TO-8 Cooling Two-stage TE-cooled Spectral response…

Category:

Description

hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area: φ2 mm

Download Datasheet:

hamamatsu InGaAs PIN photodiode G12180-220A Photosensitive area φ2 mm

Features
– Low noise, low dark current
– Low terminal capacitance
– Photosensitive area: φ2 mm

Specifications

Photosensitive area φ2.0 mm
Number of elements 1
Package Metal
Package Category TO-8
Cooling Two-stage TE-cooled
Spectral response range 0.9 to 1.65 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 0.2 nA
Cutoff frequency (typ.) 13 MHz
Terminal capacitance (typ.) 250 pF
Noise equivalent power (typ.) 2.7×10-15 W/Hz1/2
Measurement condition Typ. Tc=-20 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=1 V, Cutoff frequency: VR=1 V, RL=50 Ω, Terminal capacitance: VR=1 V, f=1 MHz

Related products