Description
hamamatsu InGaAs PIN photodiode G12181-205K Long wavelength type (cutoff wavelength: 1.85 μm)
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hamamatsu InGaAs PIN photodiode G12181-205K Long wavelength type (cutoff wavelength 1.85 μm)
Features
– Cutoff wavelength: 1.85 μm
– Two-stage TE-cooled
– Low cost
– Photosensitive area: φ0.5 mm
– Low noise
– High sensitivity
– High reliability
– High-speed response
Specifications
| Photosensitive area | φ0.5 mm |
|---|---|
| Number of elements | 1 |
| Package | Metal |
| Package Category | TO-8 |
| Cooling | Two-stage TE-cooled |
| Spectral response range | 0.9 to 1.85 μm |
| Peak sensitivity wavelength (typ.) | 1.75 μm |
| Photosensitivity (typ.) | 1.1 A/W |
| Dark current (max.) | 1.5 nA |
| Cutoff frequency (typ.) | 53 MHz |
| Terminal capacitance (typ.) | 60 pF |
| Noise equivalent power (typ.) | 5.0×10-15 W/Hz1/2 |
| Measurement condition | Typ. Tc=-20 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=0.5 V, Cutoff frequency: VR=0 V, RL=50 Ω, Terminal capacitance: VR=0 V, f=1 MHz |
