US Laser Company

hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength: 1.85 μm)
hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength: 1.85 μm) - Image 2
hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength: 1.85 μm) - Image 3

hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength: 1.85 μm)

$299.00

hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength: 1.85 μm) Download Datasheet: hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength 1.85 μm) Features – Cutoff wavelength: 1.85 μm – Two-stage TE-cooled – Low cost – Photosensitive area: φ1 mm – Low noise – High sensitivity – High reliability – High-speed response…

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Description

hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength: 1.85 μm)

Download Datasheet:

hamamatsu InGaAs PIN photodiode G12181-210K Long wavelength type (cutoff wavelength 1.85 μm)

Features
– Cutoff wavelength: 1.85 μm
– Two-stage TE-cooled
– Low cost
– Photosensitive area: φ1 mm
– Low noise
– High sensitivity
– High reliability
– High-speed response

 

Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Metal
Package Category TO-8
Cooling Two-stage TE-cooled
Spectral response range 0.9 to 1.85 μm
Peak sensitivity wavelength (typ.) 1.75 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 5 nA
Cutoff frequency (typ.) 17 MHz
Terminal capacitance (typ.) 195 pF
Noise equivalent power (typ.) 1.0×10-14 W/Hz1/2
Measurement condition Typ. Tc=-20 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=0.5 V, Cutoff frequency: VR=0 V, RL=50 Ω, Terminal capacitance: VR=0 V, f=1 MHz

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