US Laser Company

hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength: 2.1 μm)
hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength: 2.1 μm) - Image 2
hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength: 2.1 μm) - Image 3

hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength: 2.1 μm)

$299.00

hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength: 2.1 μm) Download Datasheet: hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength 2.1 μm) Features – Cutoff wavelength: 2.1 μm – Low cost – Photosensitive area: φ1 mm – Low noise – High sensitivity – High reliability – High-speed response Specifications Photosensitive area…

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Description

hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength: 2.1 μm)

Download Datasheet:

hamamatsu InGaAs PIN photodiode G12182-010K Long wavelength type (cutoff wavelength 2.1 μm)

Features
– Cutoff wavelength: 2.1 μm
– Low cost
– Photosensitive area: φ1 mm
– Low noise
– High sensitivity
– High reliability
– High-speed response

Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Metal
Package Category TO-18
Cooling Non-cooled
Spectral response range 0.9 to 2.1 μm
Peak sensitivity wavelength (typ.) 1.95 μm
Photosensitivity (typ.) 1.2 A/W
Dark current (max.) 1000 nA
Cutoff frequency (typ.) 10 MHz
Terminal capacitance (typ.) 230 pF
Noise equivalent power (typ.) 2.5×10-13 W/Hz1/2
Measurement condition Typ. Tc=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=0.5 V, Cutoff frequency: VR=0 V, RL=50 Ω, Terminal capacitance: VR=0 V, f=1 MHz

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