US Laser Company

hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor
hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor - Image 2
hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor - Image 3

hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor

$299.00

hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor Download Datasheet: hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor Features – Active area G15553-010C: φ1 mm – Miniature package: 2 × 2 × 1 mm – Precise chip position tolerance: ±0.075 mm Specifications Photosensitive area φ1.0 mm Number of elements…

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Description

hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor

Download Datasheet:

hamamatsu InGaAs PIN photodiode G15553-010C Sub-mount type photodiode for LD monitor

Features
– Active area G15553-010C: φ1 mm
– Miniature package: 2 × 2 × 1 mm
– Precise chip position tolerance: ±0.075 mm

Specifications

Photosensitive area φ1.0 mm
Number of elements 1
Package Ceramic
Package Category Surface mount type (unsealed)
Cooling Non-cooled
Spectral response range 0.9 μm to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 4 nA
Cutoff frequency (typ.) 60 MHz
Terminal capacitance (typ.) 55 pF
Noise equivalent power (typ.) 2.0×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=5 V, Cutoff frequency: VR=5 V, RL=50 Ω, Terminal capacitance: VR=5 V, f=1 MHz

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