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hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm
hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm - Image 2
hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm - Image 3

hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm

$299.00

hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm Download Datasheet: hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm This is an APD with improved sensitivity from short wavelength to 800 nm range. It offers high gain, high sensitivity, and low noise in the wide wavelength range. It…

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Description

hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm

Download Datasheet:

hamamatsu Si APD S17353-10K High sensitivity from short wavelength to 800 nm

This is an APD with improved sensitivity from short wavelength to 800 nm range. It offers high gain, high sensitivity, and low noise in the wide wavelength range. It is suitable for applications such as low-light-level measurement and analytical instrument.

 

Features
– High sensitivity and low noise from short wavelength to 800 nm

Specifications

Type Short wavelength type
Photosensitive area φ1 mm
Package Metal
Package Category TO-5
Peak sensitivity wavelength (typ.) 750 nm
Spectral response range 320 to 1000 nm
Photosensitivity (typ.) 0.44 A/W
Dark current (max.) 10 nA
Cutoff frequency (typ.) 500 MHz
Terminal capacitance (typ.) 5.5 pF
Breakdown voltage (typ.) 400 V
Temperature coefficient of breakdown voltage (typ.) 0.55 V/℃
Gain (typ.) 50
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=650 nm, M=1

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