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hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band
hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band - Image 2
hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band - Image 3

hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band

$299.00

hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band Download Datasheet: hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band Features -Low temperature coefficient: 0.4 V/℃ -High-speed response -High sensitivity, low noise Specifications Type Near infrared type (Low temperature coefficient) Photosensitive area φ5 mm Package Metal Package…

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Description

hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band

Download Datasheet:

hamamatsu Si APD S6045-06 Low temperature coefficient type APD for 800 nm band

Features
-Low temperature coefficient: 0.4 V/℃
-High-speed response
-High sensitivity, low noise

Specifications

Type Near infrared type
(Low temperature coefficient)
Photosensitive area φ5 mm
Package Metal
Package Category TO-8
Peak sensitivity wavelength (typ.) 800 nm
Spectral response range 400 to 1000 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 30 nA
Cutoff frequency (typ.) 35 MHz
Terminal capacitance (typ.) 120 pF
Breakdown voltage (typ.) 200 V
Temperature coefficient of breakdown voltage (typ.) 0.4 V/℃
Gain (typ.) 40
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=800 nm, M=1

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