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hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm)
hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm) - Image 2
hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm) - Image 3

hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm)

$299.00

hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm) Download Datasheet: hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm) Features – High sensitivity in near IR range (λ=900 nm) – Operational stability Specifications Type Near infrared type (900 nm band, low terminal capacitance) Photosensitive area φ1 mm Package…

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Description

hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm)

Download Datasheet:

hamamatsu Si APD S9251-10 High sensitivity in near IR range (λ=900 nm)

Features
– High sensitivity in near IR range (λ=900 nm)
– Operational stability

Specifications

Type Near infrared type
(900 nm band, low terminal capacitance)
Photosensitive area φ1 mm
Package Metal
Package Category TO-5
Peak sensitivity wavelength (typ.) 860 nm
Spectral response range 440 to 1100 nm
Photosensitivity (typ.) 0.52 A/W
Dark current (max.) 4 nA
Cutoff frequency (typ.) 380 MHz
Terminal capacitance (typ.) 1.9 pF
Breakdown voltage (typ.) 250 V
Temperature coefficient of breakdown voltage (typ.) 1.85 V/℃
Gain (typ.) 100
Measurement condition Typ. Ta=25 ℃, unless otherwise noted,
Photosensitivity: λ=900 nm, M=1

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