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hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity
hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity - Image 2
hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity - Image 3

hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity

$299.00

hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity Download Datasheet: hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity Features – Resin potting type – Suppressed IR sensitivity – Low dark current Specifications Photosensitive area 2.4 × 2.4 mm Package Ceramic Package category — Cooling Non-cooled…

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Description

hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity

Download Datasheet:

hamamatsu Si photodiode S1227-33BR For UV to visible, precision photometry; suppressed IR sensitivity

Features
– Resin potting type
– Suppressed IR sensitivity
– Low dark current

Specifications

Photosensitive area 2.4 × 2.4 mm
Package Ceramic
Package category —
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 340 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.43 A/W
Dark current (max.) 5 pA
Rise time (typ.) 0.5 μs
Terminal capacitance (typ.) 160 pF
Noise equivalent power (typ.) 2.1×10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted

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