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hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry
hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry - Image 2
hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry - Image 3

hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry

$299.00

hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry Download Datasheet: hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry Features – High sensitivity in UV range – Low capacitance – High reliability Specifications Photosensitive area 5.8 × 5.8 mm Package Metal Package category TO-8 Cooling Non-cooled Reverse voltage (max.) 5…

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Description

hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry

Download Datasheet:

hamamatsu Si photodiode S1336-8BK UV to near IR for precision photometry

Features
– High sensitivity in UV range
– Low capacitance
– High reliability

Specifications

Photosensitive area 5.8 × 5.8 mm
Package Metal
Package category TO-8
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 320 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 100 pA
Rise time (typ.) 1 μs
Terminal capacitance (typ.) 380 pF
Noise equivalent power (typ.) 1.3×10-14 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted

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