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hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection
hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection - Image 2
hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection - Image 3

hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection

$299.00

hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection Download Datasheet: hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection S16014-220 is a photodiode that has a built-in band-pass filter and is sensitive only to monochromatic light. The peak wavelength is 220 nm typ. The…

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Description

hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection

Download Datasheet:

hamamatsu Si photodiode S16014-220 Photodiode with band-pass filter for monochromatic light (220 nm) detection

S16014-220 is a photodiode that has a built-in band-pass filter and is sensitive only to monochromatic light. The peak wavelength is 220 nm typ. The spectral response width is extremely narrow at 11 nm (FWHM), allowing accurate photometry without any effects of stray light. It can be customized to support other peak sensitivity wavelength such as 340 nm and 560 nm.

Features
– With monochromatic light filter
– Narrow spectral response half width (FWHM)
– Small package: TO-18

Specifications

Photosensitive area 1.1 × 1.1 mm
Package Metal
Package category TO-18
with filter
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 216 to 224 nm
Peak sensitivity wavelength (typ.) 220 nm
Photosensitivity (typ.) 0.006 A/W
Dark current (max.) 10 pA
Rise time (typ.) 0.1 μs
Terminal capacitance (typ.) 25 pF
Noise equivalent power (typ.) 2.3×10-13 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=220 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, Noise equivalent power: VR=0 V, λ=λp, unless otherwise noted

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