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hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes
hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes - Image 2
hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes - Image 3

hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes

$299.00

hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes Download Datasheet: hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes S8553 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring. Its design optimized for use in the VUV region provides improved stability in…

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Description

hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes

Download Datasheet:

hamamatsu Si photodiode S8553 Vacuum UV (VUV) monitoring photodiodes

S8553 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring.
Its design optimized for use in the VUV region provides improved stability in sensitivity for VUV light irradiation compared to previous products.

 

Features
– Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm)
– Large photosensitive area: 18 × 18 mm
– Windowless package: 25.5 × 25.5 mm ceramic package

Specifications

Photosensitive area 18 × 18 mm
Package Ceramic
Package category Unsealed
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1000 nm
Photosensitivity (typ.) 0.06 A/W
Dark current (max.) 5000 pA
Rise time (typ.) 18 μs
Terminal capacitance (typ.) 8000 pF
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=193 nm, unless otherwise noted

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