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hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry
hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry - Image 2
hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry - Image 3

hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry

$299.00

hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry Download Datasheet: hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the…

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Description

hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry

Download Datasheet:

hamamatsu Si PIN photodiode S12271 Large area, high-speed PIN photodiode for UV to near IR photometry

The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power meters.

Features
– Quartz glass window
– High UV sensitivity
– Large photosensitive area: φ4.1 mm
– High-speed response: 60 MHz (VR=100 V)

Specifications

Photosensitive area φ4.1 mm
Package Metal
Package category TO-8
Cooling Non-cooled
Reverse voltage (max.) 120 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 30000 pA
Cutoff frequency (typ.) 60 MHz
Terminal capacitance (typ.) 10 pF
Noise equivalent power (typ.) 1.5×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=960 nm, Dark current: VR=100 V, Cutoff frequency: VR=100 V, Terminal capacitance: VR=100 V, f=1 MHz, Noise equivalent power: VR=100 V, λ=λp, unless otherwise noted

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