Description
hamamatsu Si PIN photodiode S15137 Si photodiode for visible to infrared photometry
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hamamatsu Si PIN photodiode S15137 Si photodiode for visible to infrared photometry
The S15137 is a Si PIN photodiode developed for YAG lasers (1.06 µm). The photosensitivity at 1.06 µm is 0.57 A/W (typ.), which is about 1.5 times higher than that of previous products. The PIN structure allows high-speed response and low capacitance. The photosensitive area is as large as φ5 mm, making optical axis alignment easier.
Features
– High sensitivity in infrared region: 0.57 A/W (λ=1.06 µm)
– High-speed response: tr=12.5 ns (VR=100 V)
– Low capacitance: Ct=10 pF (VR=100 V)
– Large photosensitive area: φ5 mm
– High reliability: TO-8 metal package
