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hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode
hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode - Image 2
hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode - Image 3

hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode

$299.00

hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode Surface mountable, high-speed response Si PIN photodiode Download Datasheet: hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode   The S15173 is a Si PIN photodiode sealed in a surface mountable chip carrier package. It can be mounted using solder…

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Description

hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode

Surface mountable, high-speed response Si PIN photodiode

Download Datasheet:

hamamatsu Si PIN photodiode S15173 Surface mountable, high-speed response Si PIN photodiode

 

The S15173 is a Si PIN photodiode sealed in a surface mountable chip carrier package. It can be mounted using solder reflow, which facilitates automation. Since the photosensitive area is large, it is suitable for FSO (free space optics) and other applications that require a wide field of view. In addition, it can be used in a wide variety of applications including measurements and analysis.

Features
– Surface mount type
– Compatible with lead-free solder reflow
– High sensitivity, high-speed response

 

Specifications

Photosensitive area 10 × 10 mm
Package Glass epoxy
Package category Surface mount type
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 380 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.69 A/W
Dark current (max.) 10000 pA
Cutoff frequency (typ.) 20 MHz
Terminal capacitance (typ.) 155 pF
Noise equivalent power (typ.) 2.9 × 10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=960 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, RL=50 Ω, Terminal capacitance: VR=10 V, f=10 kHz, NEP: VR=10 V, λ=λp, unless otherwise noted

 

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