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hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode
hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode - Image 2
hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode - Image 3

hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode

$299.00

hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode Download Datasheet: hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode The S3399 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 100 MHz. This photodiode is suitable for FSO(free space optics) and…

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Description

hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode

Download Datasheet:

hamamatsu Si PIN photodiode S3399 Large area, high-speed Si PIN photodiode

The S3399 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 100 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light detection.

Features
– Photosensitive area size: φ3.0 mm
– Cutoff frequency: 100 MHz (VR=10 V)
– High reliability: TO-5 metal package

Specifications

Photosensitive area φ3.0 mm
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 320 to 1000 nm
Peak sensitivity wavelength (typ.) 840 nm
Photosensitivity (typ.) 0.58 A/W
Dark current (max.) 1000 pA
Cutoff frequency (typ.) 100 MHz
Terminal capacitance (typ.) 20 pF
Noise equivalent power (typ.) 9.4×10-15 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=780 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=10 V, λ=λp, unless otherwise noted

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