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hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz)
hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz) - Image 2
hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz) - Image 3

hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz)

$299.00

hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz) Download Datasheet: hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz) The S5973-02 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides violet enhanced sensitivity, making it suitable for violet laser detection. Features – High-speed response: 1 GHz…

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Description

hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz)

Download Datasheet:

hamamatsu Si PIN photodiode S5973-02 High-speed response (1 GHz)

The S5973-02 is a high-speed Si PIN photodiode designed for visible to near infrared light detection. This photodiode provides violet enhanced sensitivity, making it suitable for violet laser detection.

Features
– High-speed response: 1 GHz (VR=3.3 V)
– Low price
– High sensitivity: 0.3 A/W, QE=91% (λ=410 nm)
– High reliability

Specifications

Photosensitive area φ0.4 mm
Package Metal
Package category TO-18
Cooling Non-cooled
Reverse voltage (max.) 20 V
Spectral response range 320 to 1000 nm
Peak sensitivity wavelength (typ.) 760 nm
Photosensitivity (typ.) 0.42 A/W
Dark current (max.) 100 pA
Cutoff frequency (typ.) 1000 MHz
Terminal capacitance (typ.) 1.6 pF
Noise equivalent power (typ.) 1.9×10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=780 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=3.3 V, λ=λp, unless otherwise noted

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