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hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands
hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands - Image 2
hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands - Image 3

hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands

$299.00

hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands Download Datasheet: hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the…

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Description

hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands

Download Datasheet:

hamamatsu Si PIN photodiode S9055 Flat response characteristics up to high frequency bands

The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055 ideal for combination with high-speed trans-impedance amplifiers.

Features
– Flat response characteristics up to high frequency bands
– High-speed response: 1.5 GHz (VR=2 V, -3 dB)
– Low capacitance: 0.8 pF (VR=2 V)
– Highly reliable package: 3-pin TO-18 package

Specifications

Photosensitive area φ0.2 mm
Package Metal
Package category TO-18
Cooling Non-cooled
Reverse voltage (max.) 20 V
Spectral response range 320 to 1000 nm
Peak sensitivity wavelength (typ.) 700 nm
Photosensitivity (typ.) 0.25 A/W
Dark current (max.) 100 pA
Cutoff frequency (typ.) 1500 MHz
Terminal capacitance (typ.) 0.8 pF
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=850 nm, Dark current: VR=2 V, Cutoff frequency: VR=2 V, Terminal capacitance: VR=2 V, f=1 MHz, unless otherwise noted

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