US Laser Company

hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared
hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared - Image 2
hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared - Image 3

hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared

$299.00

hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared Download Datasheet: hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared The S9119-01 is a wide directional Si PIN photodiode in a TO-18 package with a potted transparent epoxy resin. Features – Resin potting type – Low dark…

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Description

hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared

Download Datasheet:

hamamatsu Si PIN photodiode S9119-01 Si PIN photodiode for visible to near infrared

The S9119-01 is a wide directional Si PIN photodiode in a TO-18 package with a potted transparent epoxy resin.

Features
– Resin potting type
– Low dark current
– Low capacitance, high-speed response
– Wide directivity

Specifications

Photosensitive area 0.88 × 0.88 mm
Package Metal
Package category TO-18
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 320 to 1060 nm
Peak sensitivity wavelength (typ.) 920 nm
Photosensitivity (typ.) 0.63 A/W
Dark current (max.) 1000 pA
Cutoff frequency (typ.) 80 MHz
Terminal capacitance (typ.) 5 pF
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=870 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, RL=50 Ω, λ=830 nm, -3 dB, Terminal capacitance: VR=10 V, f=1 MHz, unless otherwise noted

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