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hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection
hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection - Image 2
hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection - Image 3

hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection

$299.00

hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection Download Datasheet: hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection The S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large photosensitive area. Features –…

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Description

hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection

Download Datasheet:

hamamatsu Si PIN photodiode S9195 Si PIN photodiode for violet-laser detection

The S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed response is achieved despite the large photosensitive area.

Features
– High sensitivity: 0.28 A/W typ. (λ=405 nm)
– High-speed response: 50 MHz typ. (VR=10 V)
– Photosensitive area: 5.0 × 5.0 mm
– TO-8 metal package

Specifications

Photosensitive area 5.0 × 5.0 mm
Package Metal
Package category TO-8
Cooling Non-cooled
Reverse voltage (max.) 20 V
Spectral response range 320 to 1000 nm
Peak sensitivity wavelength (typ.) 840 nm
Photosensitivity (typ.) 0.28 A/W
Dark current (max.) 5000 pA
Cutoff frequency (typ.) 50 MHz
Terminal capacitance (typ.) 60 pF
Noise equivalent power (typ.) 2.5×10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=405 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, λ=405 nm, Terminal capacitance: VR=10 V, f=1 MHz, Noise equivalent power: VR=10 V, λ=λp, unless otherwise noted

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