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hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response
hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response - Image 2
hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response - Image 3

hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response

$299.00

hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response Surface mountable, high-speed response Si PIN photodiode Download Datasheet hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response   The S15152 is a Si PIN photodiode sealed in a surface mountable chip carrier package. It can be mounted using solder reflow, which facilitates automation. Since the…

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Description

hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response

Surface mountable, high-speed response Si PIN photodiode

Download Datasheet

hamamatsu Si PIN photodiode S15152 Surface mountable high-speed response

 

The S15152 is a Si PIN photodiode sealed in a surface mountable chip carrier package. It can be mounted using solder reflow, which facilitates automation. Since the photosensitive area is large, it is suitable for FSO (free space optics) and other applications that require a wide field of view. In addition, it can be used in a wide variety of applications including measurements and analysis.

Features
– Surface mount type
– Compatible with lead-free solder reflow
– High sensitivity, high-speed response

 

Specifications

Photosensitive area 5.0 × 5.0 mm
Package Glass epoxy
Package category Surface mount type
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 380 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.69 A/W
Dark current (max.) 5000 pA
Cutoff frequency (typ.) 20 MHz
Terminal capacitance (typ.) 43 pF
Noise equivalent power (typ.) 1.7 × 10-14 W/Hz1/2
Measurement condition Ta=25 ℃, Typ., Photosensitivity: λ=960 nm, Dark current: VR=10 V, Cutoff frequency: VR=10 V, RL=50 Ω, Terminal capacitance: VR=10 V, f=10 kHz, NEP: VR=10 V, λ=λp, unless otherwise noted

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