1.High speed Datacenter

2.Low dependence of electrical and optical characteristics over temperature

 

Threshold current:0.8-2mA

Output power:1.2-1.8mW

Slope efficiency:0.35-0.55mW/mA

Operating voltage:1.9V

Resistance:35-65Ω

Wavelength:840-860nm

Spectral bandwidth:0.5nm

Bean divergence:25-30 deg.

relative intensity noise:-130 dB/Hz

 

Absolute maximum rating：

Storage temperature:-40–100℃

Operating temperature:0-85℃

Continuous forward current:12mA

Soldering temperature:260℃

 

Chip dimensions：

Chip size:250x230x150μm（t）+-15μm

Bonding pad:μm=100μm