S3584-08 Si PIN photodiode Hamamatsu




S3584-08 Si PIN photodiode Hamamatsu

Hamamatsu Large photosensitive area Si PIN photodiodes S3584-08 

-Sensitivity matching with BGO and CsI(TI) scintillators
-Low capacitance
-High-speed response
-High stability
-Good energy resolution

Photosensitive area: 28 × 28 mm
Number of elements:1
Reverse voltage (max.):100 V
Spectral response range: 340 to 1100 nm
Peak sensitivity wavelength (typ.): 960 nm
Photosensitivity (typ.): 0.66 A/W
Dark current (max.): 30000 pA
Cutoff frequency (typ.): 10 MHz
Terminal capacitance (typ.):300 pF
Measurement condition:Ta=25 ℃, Typ., unless otherwise noted, 
Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz


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