2um 2000nm 2μm Diode

2um 2000nm 2μm Diodes


800nm-2600nm 0.3mm InGaAs PIN photodiode

 Low noise, High reliability
 800-2600nm wide wavelength range
 Active diameter 0.3mm
 Hermetic package TO46 Can or with receptacle or with fiber coupling


Gas Analyzer

Environment measurement

Optical sensor, Temperature sensing

 Covert IR sensing, Spectrography

Medical and Chemical analysis

Optical power meter, Space light detect equipment

Absolute maximum ratings:

Operating temperature:-40~+85℃
Storage temperature:-50~+125℃
Forward current:5mA
Reverse voltage:0.4V
Soldering temperature(time):260℃

Electrical and optical characteristics:(T=25℃)

Active diameter: 0.3mm
Spectral range:800-2600nm
Responsivity: 0.21mA/mW Re (VR=0.2V,λ=850nm )
0.45mA/mW Re (VR=0.2V,λ=1310nm )
1.3mA/mW Re(VR=0.2V,λ=2300nm)
0.23mA/mW Re(VR=0.2V,λ=2600nm)
Response time: 12ns
Dark current:40nA ID(VR=0V)
300nA ID(VR=0V)
Reverse Breakdown voltage: 2V
Junction capacitance:90 pF Cj (f=1MHz, VR=0V)
70 pF Cj (f=1MHz, VR=0.2V)
Saturated Optical Power: 4mW
Operating voltage:0-0.2VR
Shunt impedance:120KΩ
package:Hermetic package TO46 Can or with receptacle or fiber coupling

NOTICE: The above product specifications are subject to change without notice.

800nm-2600nm 0.3mm InGaAs PIN photodiode